Charge Storage Capabilities of (a/nc) Si Embedded in SiOx Matrix and the Influence of Tunneling Layer Thickness of SiO2/(a/nc)Si–SiOx/SiOxNy Stack on the Memory Performances of MIS Structure-Reference-Cited by-同舟云学术

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Charge Storage Capabilities of (a/nc) Si Embedded in SiOx Matrix and the Influence of Tunneling Layer Thickness of SiO2/(a/nc)Si–SiOx/SiOxNy Stack on the Memory Performances of MIS Structure

Published:2017-05-01 Issue:5 Volume:17 Page:3210-3216
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Trinh Thanh Thuy¹,Shin Chonghoon¹,Nguyen Cam Phu Thi¹,Jang Kyungsoo¹,Nguyen Van Duy¹,Lee Jae Hyeong²,Dao Vinh Ai¹,Yi Junsin¹

Affiliation:

1. Information and Communication Device Laboratory, School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, 440-746, Korea

2. Energy and Nano Photovoltaic Laboratory, School of Electronic Electrical Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, 440-746, Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

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