Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1385583
Reference28 articles.
1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
2. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
3. Nitride-based semiconductors for blue and green light-emitting devices
4. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
5. Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical Consequences
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