Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1432751
Reference21 articles.
1. InGaN-based violet laser diodes
2. Theoretical analysis of unstable two-phase region and microscopic structure in wurtzite and zinc-blende InGaN using modified valence force field model
3. Solid phase immiscibility in GaInN
4. Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes
5. Incorporation of indium during molecular beam epitaxy of InGaN
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