Dopant and thickness dependence of metal-induced lateral crystallization of amorphous silicon films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1430531
Reference12 articles.
1. Polycrystalline silicon thin film transistors
2. Low-leakage germanium-seeded laterally-crystallized single-grain 100-nm TFTs for vertical integration applications
3. Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films
4. Excimer Lasbr Induced Crystallization of thin Amorphous Si Films on SiO2: Implications of Crystallized Microstructures for Phase Transformation Mechanisms
5. Silicide formation and silicide‐mediated crystallization of nickel‐implanted amorphous silicon thin films
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