Fine structure of AlN∕AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2136424
Reference14 articles.
1. Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
2. AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire
3. Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm
4. High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes
5. Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
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