New approach to the kinetics of silicon vapor phase epitaxy at reduced temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97785
Reference10 articles.
1. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
2. Submicron highly doped Si layers grown by LPVPE
3. Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition: I . Kinetics
4. Silicon molecular beam epitaxy
5. A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviour
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