Author:
Bright A. A.,Kaushik S.,Oehrlein G. S.
Subject
General Physics and Astronomy
Cited by
30 articles.
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1. Mechanism for difference in etched depth between isolated and dense via holes of SiOCH film;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-07
2. Dry etching of germanium in magnetron enhanced SF[sub 6] plasmas;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-07
3. High etch rates of SiC in magnetron enhanced SF6 plasmas;Applied Physics Letters;1996-06-24
4. Contamination Control and Etch;Fundamentals of Semiconductor Processing Technology;1995
5. High Selectivity Magnetically Enhanced Reactive Ion Etching of Boron Nitride Films;Journal of The Electrochemical Society;1994-12-01