Transmission electron microscopy characterization of the initial stage of epitaxial growth of GaP on Si by low‐pressure metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

Transmission electron microscopy characterization of the initial stage of epitaxial growth of GaP on Si by low‐pressure metalorganic chemical vapor deposition

Published:1991-05-13 Issue:19 Volume:58 Page:2108-2110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Soga T.,George T.,Suzuki T.,Jimbo T.,Umeno M.,Weber E. R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.104975

Reference5 articles.

1. Dislocation density of lattice mismatched epitaxial layers

2. A new GaAs on Si structure using AlAs buffer layers grown by atomic layer epitaxy

3. Initial Stages of Epitaxial Growth of GaP on Si with AsH3Preflow

4. Quality improvement of metalorganic chemical vapor deposition grown GaP on Si by AsH3preflow

5. Formation of planar defects in the epitaxial growth of GaP on Si substrate by metal organic chemical‐vapor deposition

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