Evolution of vacancy ordering structures in epitaxial YbSi2−x thin films on (111) and (001)Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1525064
Reference26 articles.
1. Si/CoSi2/Si permeable base transistor obtained by silicon molecular beam epitaxy over a CoSi2 grating
2. Epitaxial growth of transition-metal silicides on silicon
3. Atomic structure of Si/TbSi2/(111)Si double‐heterostructure interfaces
4. Low Schottky barrier of rare‐earth silicide onn‐Si
5. The Schottky‐barrier height of the contacts between some rare‐earth metals (and silicides) andp‐type silicon
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