Medium-energy ion-scattering study of strained holmium silicide nanoislands grown on silicon (100)-Reference-Cited by-同舟云学术

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Medium-energy ion-scattering study of strained holmium silicide nanoislands grown on silicon (100)

Published:2008-07-15 Issue:3 Volume:78 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Wood T. J.,Eames C.,Bonet C.,Reakes M. B.,Noakes T. C. Q.,Bailey P.,Tear S. P.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.78.035423/fulltext

Reference36 articles.

1. Formation of dysprosium silicide wires on Si(001)

2. One-dimensional Gd-induced chain structures on Si() surfaces

3. Gd disilicide nanowires attached to Si(111) steps

4. Nanowires of four epitaxial hexagonal silicides grown on Si(001)

5. Formation of hexagonal Gd disilicide nanowires on Si(100)

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2. Synthesis and Growth Mechanism of Stable Prenucleated (≈0.8 nm Diameter) PbS Quantum Dots by Medium Energy Ion Scattering Spectroscopy;Materials;2019-04-03

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4. Diffusion kinetics and evolution of self-assembled nickel germanide nanorings on germanised Si (100);RSC Advances;2015

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