Development of a three-dimensional numerical model of grain boundaries in highly doped polycrystalline silicon and applications to solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1456962
Reference35 articles.
1. Improved modeling of grain boundary recombination in bulk andp‐njunction regions of polycrystalline silicon solar cells
2. Grain boundary effects in polycrystalline silicon solar cells I. Solution of the three-dimensional diffusion equation by the Green's function method
3. Grain boundary effects in polycrystalline silicon solar cells II: Numerical calculation of the limiting parameters and maximum efficiency
4. 3D-Modelling of polycrystalline silicon solar cells
5. Grain Boundary States in Silicon and Germanium
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