Origin of off-stoichiometry and electrical benignity at the grain boundaries in CuInSe2: A first-principles study-Reference-Cited by-同舟云学术

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Origin of off-stoichiometry and electrical benignity at the grain boundaries in CuInSe2: A first-principles study

Published:2020-10-14 Issue:14 Volume:128 Page:145702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhu Guo-Jun¹,Yang Ji-Hui¹^ORCID,Gong Xin-Gao¹²

Affiliation:

1. Department of Physics, Key Laboratory for Computational Science (MOE), State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China

2. Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, Jiangsu, China

Funder

National Natural Science Foundation of China

Shanghai Sailing Program

Fudan start-up Funding

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0018397

Reference32 articles.

1. Bounds upon grain boundary effects in minority carrier semiconductor devices: A rigorous ‘‘perturbation’’ approach with application to silicon solar cells

2. Development of a three-dimensional numerical model of grain boundaries in highly doped polycrystalline silicon and applications to solar cells

3. New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%

4. Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells

5. Grain-Boundary Physics in PolycrystallineCuInSe2Revisited: Experiment and Theory

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