Bounds upon grain boundary effects in minority carrier semiconductor devices: A rigorous ‘‘perturbation’’ approach with application to silicon solar cells-Reference-Cited by-同舟云学术

Bounds upon grain boundary effects in minority carrier semiconductor devices: A rigorous ‘‘perturbation’’ approach with application to silicon solar cells

Published:1996-08 Issue:3 Volume:80 Page:1515-1521
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Green Martin A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.363022

Reference8 articles.

1. Evaporated polycrystalline silicon films for photovoltaic applications - grain size effects

2. Theory of the electrical and photovoltaic properties of polycrystalline silicon

3. A model of the dependence of photovoltaic properties on effective diffusion length in polycrystalline silicon

4. Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination

5. Mechanical properties of thin alloy films: Ultramicrohardness and internal stress

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