SiO2precipitate strain relief in Czochralski Si: Self‐interstitial emission versus prismatic dislocation loop punching
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351610
Reference13 articles.
1. Circular stacking faults in silicon
2. Oxygen precipitation and the generation of dislocations in silicon
3. Characterization of structural defects in annealed silicon containing oxygen
4. Minority carrier lifetime in annealed silicon crystals containing oxygen
5. Precipitation of oxygen in dislocation-free silicon
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1. Formation of thermal donor enhanced by oxygen precipitation in silicon crystal;AIP Advances;2020-04-01
2. Enhanced diffusion of boron by oxygen precipitation in heavily boron-doped silicon;Journal of Applied Physics;2017-06-07
3. Oxygen in Silicon;Handbook of Silicon Based MEMS Materials and Technologies;2010
4. Complementary infrared and transmission electron microscopy studies of the effect of high temperature–high pressure treatments on oxygen-related defects in irradiated silicon;Journal of Applied Physics;2003-10
5. Physical Model of Paths of Microdefects Nucleation in Dislocation-Free Single Crystals Float-Zone Silicon;Crystal Research and Technology;2002-09
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