Complementary infrared and transmission electron microscopy studies of the effect of high temperature–high pressure treatments on oxygen-related defects in irradiated silicon-Reference-Cited by-同舟云学术

Complementary infrared and transmission electron microscopy studies of the effect of high temperature–high pressure treatments on oxygen-related defects in irradiated silicon

Published:2003-10 Issue:7 Volume:94 Page:4363-4367
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Londos C. A.,Potsidi M. S.,Misiuk A.,Ratajczak J.,Emtsev V. V.,Antonaras G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1602952

Reference13 articles.

1. Oxygen precipitation in silicon

2. Thermodynamic and kinetic considerations on the equilibrium shape for thermally induced microdefects in Czochralski silicon

3. Microscopic aspects of oxygen precipitation in silicon

4. Electrical and Optical Properties of Titanium, Vanadium, Molybdenum, and Tungsten Related Defects in Silicon

5. New Oxygen Infrared Bands in Annealed Irradiated Silicon

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Studies of annealing of point defects and their influence on the electrical degradation and recovery behaviors of heavily neutron irradiated silicon;Radiation Effects and Defects in Solids;2018-10-15

2. Charge carrier lifetime recovery in γ-irradiated silicon under the action of ultrasound;Technical Physics Letters;2012-05

3. Effects of germanium doping on the behavior of oxygen and carbon impurities and impurity-related complexes in Si;Physica B: Condensed Matter;2009-12

4. The Effect of Thermal Treatments on the Annealing Behaviour of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon;Solid State Phenomena;2005-12

5. Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si;Solid State Phenomena;2005-12