Oxygen precipitation and the generation of dislocations in silicon
Author:
Affiliation:
1. a IBM System Products Division , Essex Junction , Vermont , 05452 , U.S.A.
Publisher
Informa UK Limited
Link
https://www.tandfonline.com/doi/pdf/10.1080/14786437608223798
Reference19 articles.
1. On the generation of dislocations at misfitting particles in a ductile matrix
2. Useful Properties of Dark-Field Electron Images
3. Contrast from large prismatic dislocation loops
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