A deep learning based dislocation detection method for cylindrical silicon growth process
Author:
Publisher
Springer Science and Business Media LLC
Subject
Artificial Intelligence
Link
https://link.springer.com/content/pdf/10.1007/s10489-022-03800-0.pdf
Reference38 articles.
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3. Su W, Zuo R, Mazaev K, Kalaev V (2010) Optimization of crystal growth by changes of flow guide, radiation shield and sidewall insulation in cz si furnace. J Cryst Growth 312(4):495– 501
4. Kamada K, Kurosawa S, Prusa P, Nikl M, Kochurikhin VV, Endo T, Tsutumi K, Sato H, Yokota Y, Sugiyama K (2014) Cz grown 2-in. size ce: Gd3 (al, ga) 5o12 single crystal; relationship between al, ga site occupancy and scintillation properties. Opt Mater 36(12):1942–1945
5. Sueoka K, Ikeda N, Yamamoto T, Kobayashi S (1993) Morphology and growth process of thermally induced oxide precipitates in czochralski silicon. J Appl Phys 74(9):5437–5444
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