Cz grown 2-in. size Ce:Gd3(Al,Ga)5O12 single crystal; relationship between Al, Ga site occupancy and scintillation properties-Reference-Cited by-同舟云学术

Cz grown 2-in. size Ce:Gd3(Al,Ga)5O12 single crystal; relationship between Al, Ga site occupancy and scintillation properties

Published:2014-10 Issue:12 Volume:36 Page:1942-1945
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Kamada Kei,Kurosawa Shunsuke,Prusa Petr,Nikl Martin,Kochurikhin Vladimir V.,Endo Takanori,Tsutumi Kousuke,Sato Hiroki,Yokota Yuui,Sugiyama Kazumasa,Yoshikawa Akira

Funder

JSPS

Japan Science and Technology Agency

JST

Japan Society for the Promotion of Science

The Ministry of Health Labour and Welfare

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference10 articles.

1. Front Matter for Volume 7805

2. Composition Engineering in Cerium-Doped (Lu,Gd)3(Ga,Al)5O12 Single-Crystal Scintillators

3. Scintillator-oriented combinatorial search in Ce-doped (Y,Gd)3(Ga,Al)5O12multicomponent garnet compounds

4. 2inch diameter single crystal growth and scintillation properties of Ce:Gd3Al2Ga3O12

5. Growth and Scintillation Properties of Pr Doped $({\hbox {Gd}},{\hbox {Y}})_{3}({\hbox {Ga}},{\hbox {Al}})_{5} {\hbox {O}}_{12}$ Single Crystals

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