Formation of stoichiometric SiGe oxide by electron cyclotron resonance plasma
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106714
Reference21 articles.
1. Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma
2. Heterojunction bipolar transistors using Si-Ge alloys
3. Resonant tunneling through a Si/GexSi1−x/Si heterostructure on a GeSi buffer layer
4. Hole transport through minibands of a symmetrically strained GexSi1−x/Si superlattice
5. Physics and applications of GexSi1-x/Si strained-layer heterostructures
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4. Different Growth-Temperature Effects on the Liquid-Phase-Deposited SiO[sub 2] Grown on Strained SiGe;Electrochemical and Solid-State Letters;2010
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