Charge carrier transport and electroluminescence in atomic layer deposited poly-GaN/c-Si heterojunction diodes-Reference-Cited by-同舟云学术

Charge carrier transport and electroluminescence in atomic layer deposited poly-GaN/c-Si heterojunction diodes

Published:2018-08-28 Issue:8 Volume:124 Page:084503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gupta Gaurav¹^ORCID,Banerjee Sourish¹^ORCID,Dutta Satadal¹,Aarnink Antonius A. I.¹,Schmitz Jurriaan¹^ORCID,Kovalgin Alexey Y.¹,Hueting Raymond J. E.¹^ORCID

Affiliation:

1. University of Twente, Enschede, The Netherlands

Funder

Stichting voor de Technische Wetenschappen

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5041089

Reference60 articles.

1. GaN, AlN, and InN: A review

2. The toughest transistor yet [GaN transistors]

3. Prospects of III-nitride optoelectronics grown on Si

4. GaN on Si Technologies for Power Switching Devices

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