The structure of the SiO2∕Si(100) interface from a restraint-free search using computer simulations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2158520
Reference41 articles.
1. High dielectric constant oxides
2. Atomically controlled interfaces for future nanoelectronics
3. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
4. Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness
5. Electronic structure of thin film silicon oxynitrides measured using soft x-ray emission and absorption
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