Electronic structure of thin film silicon oxynitrides measured using soft x-ray emission and absorption
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1599629
Reference27 articles.
1. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2. The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics
3. Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor–dielectric interfaces and (ii) internal interfaces in stacked dielectrics
4. Properties of Si[sub x]O[sub y]N[sub z] Films on Si
5. Optical absorption in plasma‐deposited silicon oxynitride films
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3. Analysis of electronic structure and optical properties of N-doped SiO2 based on DFT calculations;Modern Physics Letters B;2015-07-20
4. Electronic structure and optical properties of Si–O–N compounds with different crystal structures;RSC Adv.;2014
5. Electronic structure of boron doped diamond: An x-ray spectroscopic study;Applied Physics Letters;2013-04-22
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