Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1923180
Reference20 articles.
1. Field emission properties of heavily Si-doped AlN in triode-type display structure
2. AlN/diamond heterojunction diodes
3. Optical and electrical properties of Al-rich AlGaN alloys
4. Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)
5. Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1)
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1. Silicon diffusion in AlN;Journal of Applied Physics;2023-09-06
2. Temperature dependence of electrical characteristics of Si-implanted AlN layers on sapphire substrates;Applied Physics Express;2023-06-01
3. Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE;Materials Science in Semiconductor Processing;2022-05
4. DX center formation in highly Si doped AlN nanowires revealed by trap assisted space-charge limited current;Applied Physics Letters;2022-04-18
5. The Theoretical Study of Unexpected Magnetism in 2D Si-Doped AlN;Frontiers in Physics;2022-03-11
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