Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristics-Reference-Cited by-同舟云学术

Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristics

Published:2011-05-02 Issue:18 Volume:98 Page:183502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Xinke,Liu Bin,Low Edwin Kim Fong,Liu Wei,Yang Mingchu,Tan Leng-Seow,Teo Kie Leong,Yeo Yee-Chia

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3584856

Reference23 articles.

1. The 1.6-kV AlGaN/GaN HFETs

2. A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz

3. AlGaN/GaN HEMT With 300-GHz $f_{\max}$

4. Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors

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