Surface donor states-dependent bare surface barrier height and 2DEG density of AlGaN/GaN heterostructure exerted uniaxial stress-Reference-Cited by-同舟云学术

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Surface donor states-dependent bare surface barrier height and 2DEG density of AlGaN/GaN heterostructure exerted uniaxial stress

Published:2018-02-15 Issue:2 Volume:5 Page:025903
ISSN:2053-1591
Container-title:Materials Research Express
language:
Short-container-title:Mater. Res. Express

Author:

Wang Ashu^ORCID,Zeng Lingyan,Wang Wen

Funder

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/2053-1591/aaac98/pdf

Reference30 articles.

1. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

2. Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

3. Distribution of donor states on etched surface of AlGaN/GaN heterostructures

4. Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures

5. On the origin of the two-dimensional electron gas at the AlGaN∕GaN heterostructure interface

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1. The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface;Nanomaterials;2024-07-16

2. A Bendable Microwave GaN HEMT on CVD Parylene-C Substrate;2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO);2020-12-07

3. Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending;Applied Physics Letters;2020-03-23

4. Static and dynamic simulation studies on the AlGaN/GaN pressure sensor;Semiconductor Science and Technology;2019-10-22

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