A Bendable Microwave GaN HEMT on CVD Parylene-C Substrate
Author:
Affiliation:
1. University of Electronic Science and Technology of China,Department of Microwave Engineering,Chengdu,China,611731
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9343381/9343405/09343508.pdf?arnumber=9343508
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1. Biocompatible Parylene-C Laser-Induced Graphene Electrodes for Microsupercapacitor Applications;ACS Applied Materials & Interfaces;2022-10-09
2. High-Speed and High-Temperature Calorimetric Solid-State Thermal Mass Flow Sensor for Aerospace Application: A Sensitivity Analysis;Sensors;2022-05-03
3. Microwave MIM Capacitors Enabled by an iCVD N-type Parylene Dielectric for Flexible MMIC;2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2021-11-15
4. Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics;Micromachines;2021-06-19
5. Bendable Microwave AlGaN/GaN High-Electron-Mobility Transistor With Output Power Density of 2.65 W/mm;IEEE Electron Device Letters;2021-05
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