An examination of facet formation during solid phase epitaxy of line-shaped amorphized regions in (001) and (011) Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2736343
Reference13 articles.
1. Optimisation of Junctions formed by Solid Phase Epitaxial Regrowth for sub-70nm CMOS
2. Solid Phase Recrystallization and Strain Relaxation in Ion-Implanted Strained Si on SiGe Heterostructures
3. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
4. Some observations on the amorphous to crystalline transformation in silicon
5. Regrowth of amorphous films
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