Investigation on Ge surface diffusion via growing Ge quantum dots on top of Si pillars
Author:
Affiliation:
1. State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433, China
2. Collaborative Innovative Center of Advanced Microstructures, Nanjing, 210093, China
Funder
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4961992
Reference29 articles.
1. Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices
2. Near-infrared waveguide photodetector with Ge/Si self-assembled quantum dots
3. Ge/Si Self-Assembled Quantum Dots and Their Optoelectronic Device Applications
4. Changing the Diffusion Mechanism of Ge-Si Dimers on Si(001) using an Electric Field
5. Strain effect on adatom binding and diffusion in homo- and heteroepitaxies ofSiandGeon(001)Surfaces
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1. Shape and Composition Evolution in an Alloy Core–Shell Nanowire Heterostructure Induced by Adatom Diffusion;Nanomaterials;2023-05-25
2. Sensitively Site‐Dependent Enhancement of Emissions from Ge Quantum Dots in SiGe Microdisks;Advanced Photonics Research;2022-08-17
3. Self-assembly of tensile-strained Ge quantum dots on InAlAs(111)A;Journal of Crystal Growth;2020-03
4. Controllable growth of GeSi nanostructures by molecular beam epitaxy;Journal of Semiconductors;2018-05-29
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