Changing the Diffusion Mechanism of Ge-Si Dimers on Si(001) using an Electric Field
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.91.206104/fulltext
Reference27 articles.
1. Si/Ge nanostructures
2. High-mobility Si and Ge structures
3. Experimental and Theoretical Study of the Rotation of Si Ad-dimers on the Si(100) Surface
4. Electric field effects on surface dynamics: Si ad-dimer diffusion and rotation on Si()
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1. Scanning Tunneling Microscopy in Surface Science;Springer Handbook of Microscopy;2019
2. Investigation on Ge surface diffusion via growing Ge quantum dots on top of Si pillars;AIP Advances;2016-08
3. Adsorption and dynamics of group IV, V atoms and molecular oxygen on semiconductor group IV (0 0 1) surfaces;Journal of Physics: Condensed Matter;2016-06-14
4. Study of the Interaction of Atoms of the IV- and V-th Groups with Si(001) and Ge(001) Surfaces;Ukrainian Journal of Physics;2015-02
5. Unrolling the evolution kinetics of ordered SiGe islands via Ge surface diffusion;Physical Review B;2013-09-20
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