Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence
Author:
Affiliation:
1. Applied Physics Department, University of Salamanca, Plaza de la Merced s/n, 37008 Salamanca, Spain
2. Institut d’Electronique de Microélectronique et de Nanotechnologie, University of Lille 1, 59652 Villeneuve d’Ascq, France
Funder
Ministerio de Economía, Industria y Competitividad, Gobierno de España
Junta de Castilla y León
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0061905
Reference33 articles.
1. The 2017 terahertz science and technology roadmap
2. R. Lai, X. B. Mei, W. R. Deal, W. Yoshida, Y. M. Kim, P. H. Liu, J. Lee, J. Uyeda, V. Radisic, M. Lange, T. Gaier, L. Samoska, and A. Fung, “Sub 50 nm InP HEMT device with Fmax greater than 1 THz,” in Proceedings of the IEDM (IEEE, 2007), p. 609.
3. Nonlinear Electron Transport in an Asymmetric Microjunction: A Ballistic Rectifier
4. Microwave Detection at 110 GHz by Nanowires with Broken Symmetry
5. J. S. Galloo, E. Pichonat, Y. Roelens, S. Bollaert, X. Wallart, A. Cappy, J. Mateos, and T. González, “Transition from ballistic to ohmic transport in t-branch junctions at room temperature in GalnAs/AlInAs heterostructures,” in Proceedings of the International Conference on Indium Phosphide and Related Materials (IEEE, 2004), pp. 378–381.
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion;Journal of Applied Physics;2024-01-22
2. Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements;IEEE Transactions on Microwave Theory and Techniques;2024
3. Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08
4. Low temperature memory effects in AlGaN/GaN nanochannels;Applied Physics Letters;2023-09-04
5. Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature;Nanotechnology;2023-05-24
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3