Low temperature memory effects in AlGaN/GaN nanochannels

Abstract

Two-terminal devices based on an AlGaN/GaN nanochannel exhibit a significant hysteresis in their current–voltage curve due to their large surface-to-volume ratio. Surface effects at the sidewalls of the trenches defining the nanochannel are the key for such behavior. By applying large positive/negative voltages, it is possible to trap/de-trap electrons in/from the surface states, thus modulating the conductance of the channel. In this work, the characteristic times of the involved slow processes (of the order of tens or hundreds of s) are studied from 70 up to 200 K, and the possible memory applications due to the charge retention are explored.