Surface roughening of tensilely strained Si1−x−yGexCy films grown by ultrahigh vacuum chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1505114
Reference13 articles.
1. Electronic-band parameters in strainedSi1−xGexalloys onSi1−yGeysubstrates
2. Epitaxial growth of Si1−x−yGexCy alloy layers on (100) Si by rapid thermal chemical vapor deposition using methylsilane
3. MBE growth and properties of supersaturated, carbon-containing silicon/germanium alloys on Si(001)
4. Atomistic evolution of Si1–x–yGexCy thin films on Si(001) surfaces
5. Growth of epitaxial germanium-silicon heterostructures by chemical vapour deposition
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1. Thickness dependences of ferroelectric and dielectric properties in (Bi3.15Nd0.85)Ti3O12 thin films;Journal of Applied Physics;2006-04
2. Polarization behaviors of (Bi3.15Nd0.85)Ti3O12 thin films deposited by radio-frequency magnetron sputtering;Journal of Applied Physics;2005-11-15
3. Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1−x−yGexCy thin films on Si(001) with ethylene (C2H4) precursor as carbon source;Materials Science in Semiconductor Processing;2005-02
4. Ferroelectric behaviors and charge carriers in Nd-doped Bi4Ti3O12 thin films;Journal of Applied Physics;2005-02
5. Roughening mechanisms of tensily strained Si1−x−yGexCy films grown by UHV-CVD: evidence of a carbon surface diffusion related mechanism;Applied Surface Science;2004-03
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