Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1−x−yGexCy thin films on Si(001) with ethylene (C2H4) precursor as carbon source
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference17 articles.
1. Xu MW, Decoutere S, Sibaja-Hernandez A, Wichelen K, Witters L, Loo R, Kunnen E, Knorr C, Sadovnikov, Bulucea C. Ultra low power SiGe:C HBT for 0.18nm RF-BiCMOS. In: Tech Digest of Int Electron Devices Meet 2003;125–28
2. Metal–oxide–semiconductor capacitance–voltage characteristics and band offsets for Si1−yCy/Si heterostructure;Rim;Appl Phys Lett,1998
3. Growth dynamics of Si1−yCy and Si1−x−yGexCy on Si(001) surface from disilane, germane, and methylsilane;Price;Appl Phys Lett,2002
4. High quality Si1−x−yGexCy epitaxial layers grown on (100) Si by rapid thermal chemical vapor deposition using methylsilane;Mi;Appl Phys Lett,1995
5. Ray SK, John S, Oswal S, Banerjee SK. NOVEL SiGeC CHANNEL HETEROJUCTION PMOSFE. In: Tech. Digest of Int. Electron Devices Meet. 1996;261–64
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