Electrical characteristics of nearly relaxed InAs/GaP heterojunctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118614
Reference8 articles.
1. Incoherent interface of InAs grown directly on GaP(001)
2. Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy
3. Reproducibility studies of lattice matched GaInAsP on (100) InP grown by molecular beam epitaxy using solid phosphorus
4. InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker
5. Empirical fit to band discontinuities and barrier heights in III–V alloy systems
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1. First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE;physica status solidi (c);2009-10
2. A hybrid epitaxy method for InAs on GaP;Applied Physics Letters;2004-10-18
3. InAs/GaP/InGaP high-temperature power Schottky rectifier;Applied Physics Letters;2004-04-12
4. Effects of GaP Cap Layer Growth on Self-Assembled InAs Islands Grown on GaP (001) by Organometallic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2000-06-15
5. Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy;Applied Surface Science;1998-06
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