Structure and interface bonding of GeO2∕Ge∕In0.15Ga0.85As heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2992560
Reference21 articles.
1. Nanoindentation studies of materials
2. Characterization of atomic-layer-deposited Al2O3∕GaAs interface improved by NH3 plasma pretreatment
3. In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
4. Development of GaAs-based MOSFET using molecular beam epitaxy
5. Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effective Schottky barrier height lowering technique for InGaAs contact scheme: DMIGS and Dit reduction and interfacial dipole formation;Applied Surface Science;2018-09
2. Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition;Nanoscale Research Letters;2017-05-25
3. Ar Plasma Treatment for III–V Semiconductor-Based Transistor Source/Drain Contact Resistance Reduction;Journal of Nanoscience and Nanotechnology;2016-10-01
4. Improved thermal stability and electrical properties of atomic layer deposited HfO2/AlN high-k gate dielectric stacks on GaAs;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-01
5. The combination self-cleaning effect of trimethylaluminium and tetrakis (dimethyl-amino) hafnium pretreatments on GaAs;Applied Surface Science;2012-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3