Buried heterostructure 0.98 μm InGaAs/InGaAsP/InGaP lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110577
Reference13 articles.
1. High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers
2. Low threshold 0.98 μm aluminium-free strained-quantum-well InGaAs/InGaAsP/InGaP lasers
3. Aluminium free InGaAs/GaAs/InGaAsP/InGaP GRINSCH SL-SQW lasers at 0.98 μm
4. Advantages of InGaAsP separate confinement layer in 0.98 μm InGaAs/GaAs/InGaP strained DQW lasers for high power operation at high temperature
5. Very high efficiency GaInAsP/GaAs strained‐layer quantum well lasers (λ=980 nm) with GaInAsP optical confinement layers
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1. A design analysis of a GaInP/GaInAs/GaAs-based 980 nm Al-free pump laser using self-consistent numerical simulation;Semiconductor Science and Technology;2001-09-12
2. High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers;Applied Physics Letters;1998-08-31
3. Differential gain of strained InGaAs/InGaAsP quantum‐well lasers lattice matched to GaAs;Journal of Applied Physics;1996-02-15
4. Optical strength of semiconductor laser materials;Progress in Quantum Electronics;1996-01
5. From research to manufacture—The evolution of MOCVD;JOM;1995-12
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