Advantages of InGaAsP separate confinement layer in 0.98 μm InGaAs/GaAs/InGaP strained DQW lasers for high power operation at high temperature
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19921043?crawler=true&mimetype=application/pdf
Reference4 articles.
1. High power CW operation of aluminium-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasers
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. MOCVD growth of 980nm InGaAs/GaAs/AlGaAs graded index separate confinement heterostructure quantum well lasers with tertiarybutylarsine;Journal of Crystal Growth;2006-03
2. High-power, single-mode, Al-free InGaAs(P)/InGaP/GaAs distributed feedback diode lasers;Journal of Crystal Growth;1998-12
3. Highly reliable and stable-lateral-mode operation of high-power 0.98-μm InGaAs-InGaAsP lasers with an exponential-shaped flared stripe;IEEE Journal of Selected Topics in Quantum Electronics;1997-04
4. High-power highly-reliable operation of 0.98-μm InGaAs-InGaP strain-compensated single-quantum-well lasers with tensile-strained InGaAsP barriers;IEEE Journal of Selected Topics in Quantum Electronics;1995-06
5. Infrared microscopy studies on high-power InGaAs-GaAs-InGaP lasers with Ga/sub 2/O/sub 3/ facet coatings;IEEE Journal of Selected Topics in Quantum Electronics;1995-06
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