High-power, single-mode, Al-free InGaAs(P)/InGaP/GaAs distributed feedback diode lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Antiresonant reflecting optical waveguide‐type, single‐mode diode lasers
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4. MOCVD regrowth over GaAs/AlGaAs gratings for high power long-lived InGaAs/AlGaAs lasers
5. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
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1. Realization of temperature-insensitive energy band-gap based on nanowire-well quantum systems for thermally frequency-stable laser diodes;Journal of Materials Chemistry C;2024
2. Laser Single-Mode Characteristics of InGaAs/GaAs/InGaP Quantum Well Lasers;Laser & Optoelectronics Progress;2019
3. The optimum condition of GaxIn1-xP/GaAs1-yPy strain compensation for excessive strained In0.15GaAs MQWs in 1000 nm infrared light-emitting diode;Infrared Physics & Technology;2018-09
4. Quantum-Well Lasers and Their Applications;Reference Module in Materials Science and Materials Engineering;2016
5. Distributed feedback GaSb based laser diodes with buried grating;Applied Physics Letters;2014-04-21
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