Differential gain of strained InGaAs/InGaAsP quantum‐well lasers lattice matched to GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361042
Reference16 articles.
1. Degradation of (AlGa)As DH lasers due to facet oxidation
2. Aluminium-free 980 nm laser diodes
3. High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers
4. Strained‐layer InGaAs/GaInAsP/GaInP quantum well lasers grown by gas‐source molecular beam epitaxy
5. Buried heterostructure 0.98 μm InGaAs/InGaAsP/InGaP lasers
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Composition Disorders on Band Structure and Optical Gain Spectra of GaInNAs/GaAs Quantum Wells;Japanese Journal of Applied Physics;2009-08-20
2. Comparison of electronic band structure and optical transparency conditions ofInxGa1−xAs1−yNy∕GaAsquantum wells calculated by 10-band, 8-band, and 6-bandk∙pmodels;Physical Review B;2005-09-28
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