Author:
Kauser M. Z.,Osinsky A.,Dabiran A. M.,Pearton S. J.
Subject
General Physics and Astronomy
Reference27 articles.
1. T. Makimoto and K. Kumakura, in State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V, Proceedings of the 206th Electrochemical Society Meeting, Honolulu, HI, October 3–8, 2004, edited by H. M. Ng and A. G. Baca (Electrochemical Society, New York, 2004), Vol. 2004-06, pp. 395–404.
2. High-power characteristics of GaN/InGaN double heterojunction bipolar transistors
3. GaN HBT: toward an RF device
4. Effects of base structure on performance of GaN-based heterojunction bipolar transistors
5. Effects of base structure on performance of GaN-based heterojunction bipolar transistors
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献