Enhanced Hole Transport in Mg-Doped Al$_{x}$Ga$_{1-x}$N/GaN Superlattices by Strain and Period Modulations-Reference-Cited by-同舟云学术

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Enhanced Hole Transport in Mg-Doped Al$_{x}$Ga$_{1-x}$N/GaN Superlattices by Strain and Period Modulations

Published:2012-06-14 Issue: Volume:51 Page:071001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Ningyang,Li Ding,Wang Lei,Liu Lei,Yang Wei,Li Lei,Cao Wenyu,Lu Cimang,Wan Chenghao,Chen Weihua,Hu Xiaodong

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstrating the electron blocking effect of AlGaN/GaN superlattice cladding layers in GaN-based laser diodes;Semiconductor Science and Technology;2023-05-25

2. GaN-based substrates and optoelectronic materials and devices;Chinese Science Bulletin;2014-03-01

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