Determination of band alignment of pulsed-laser-deposited perovskite titanate/III-V semiconductor heterostructure using X-ray and ultraviolet photoelectron spectroscopy-Reference-Cited by-同舟云学术

Determination of band alignment of pulsed-laser-deposited perovskite titanate/III-V semiconductor heterostructure using X-ray and ultraviolet photoelectron spectroscopy

Published:2013-07-15 Issue:3 Volume:103 Page:031919
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yang Zhibin,Huang Wen,Hao Jianhua

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4816356

Reference25 articles.

1. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation

2. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications

3. Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor

4. Fundamentals of III-V Semiconductor MOSFETs

5. Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfO2 Interfaces

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