Epitaxial growth of flexible 1T-VSe2 thin films on mica by pulsed laser deposition

Author:

Mao Wei1ORCID,Deng Xing1ORCID,Sui Feng-Rui1,Xu Ya-Ting1,Qi Rui-Juan1ORCID,Chen Bin-Bin1,Xiang Ping-Hua12ORCID,Zhong Ni12ORCID

Affiliation:

1. Key Laboratory of Polar Materials and Devices (MOE) and State Key Laboratory of Precision Spectroscopy, East China Normal University 1 , 500 Dongchuan Rd., Shanghai 200241, China

2. Collaborative Innovation Center of Extreme Optics, Shanxi University 2 , Taiyuan, Shanxi 030006, China

Abstract

Recently, vanadium diselenide (VSe2), a member of transition metal dichalcogenides, has attracted a great deal of interest in spintronic devices and memory devices due to its unique physical properties. However, it is still a challenge to prepare a continuous VSe2 thin film which is critical for its potential application. Here, we report a continuous single-crystalline 1T-VSe2 thin film grown on mica by pulsed laser deposition. Both x-ray diffraction and high-resolution transmission electron microscopy verify the van der Waals epitaxy of the VSe2/mica heterostructure. Free-standing and flexible VSe2 thin films can be obtained and combined with integrated circuit technology, which is of great significance for the application of two-dimensional materials in the field of multifunctional flexible electronic devices.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Science and Technology Innovation Plan Of Shanghai Science and Technology Commission

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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