Emergence of a Metal–Insulator Transition and High-Temperature Charge-Density Waves in VSe2 at the Monolayer Limit-Reference-Cited by-同舟云学术

Emergence of a Metal–Insulator Transition and High-Temperature Charge-Density Waves in VSe2 at the Monolayer Limit

Published:2018-07-31 Issue:9 Volume:18 Page:5432-5438
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Duvjir Ganbat¹,Choi Byoung Ki²,Jang Iksu³,Ulstrup Søren⁴⁵,Kang Soonmin⁶⁷,Thi Ly Trinh¹,Kim Sanghwa¹,Choi Young Hwan²^ORCID,Jozwiak Chris⁴,Bostwick Aaron⁴,Rotenberg Eli⁴,Park Je-Geun⁶⁷^ORCID,Sankar Raman⁸⁹^ORCID,Kim Ki-Seok³,Kim Jungdae¹^ORCID,Chang Young Jun²^ORCID

Affiliation:

1. Department of Physics, BRL, and EHSRC, University of Ulsan, Ulsan 44610, Republic of Korea

2. Department of Physics, University of Seoul, Seoul 02504, Republic of Korea

3. Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea

4. Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

5. Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark

6. Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea

7. Department of Physics and Astronomy, Seoul National University (SNU), Seoul 08826, Republic of Korea

8. Institute of Physics, Academia Sinica, Taipei 10617, Taiwan

9. Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan

Funder

National Research Foundation of Korea

Natur og Univers, Det Frie Forskningsr?d

Villum Fonden

Institute for Basic Science

Basic Science Research Institute, Pohang University of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b01764

Reference34 articles.

1. Electronic reconstruction at an interface between a Mott insulator and a band insulator

2. Emergent phenomena at oxide interfaces

3. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

4. Characterization of collective ground states in single-layer NbSe2

5. Emergence of charge density waves and a pseudogap in single-layer TiTe2

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