An intermediate-band-assisted avalanche multiplication in InAs/InGaAs quantum dots-in-well infrared photodetector
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3554758
Reference22 articles.
1. Field effect enhanced quantum dot resonant tunneling diode for high dynamic range light detection
2. Carrier wave-packet transport under the influence of charged quantum dot in small-area resonant tunneling diode
3. High photoexcited carrier multiplication by charged InAs dots in AlAs∕GaAs∕AlAs resonant tunneling diode
4. Comparison and competition between MCT and QW structure material for use in IR detectors
5. Infrared detectors: status and trends
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3. An analysis of the growth of silver catalyzed InxGa1−xAs nanowires on Si (100) by metal organic chemical vapor deposition;Journal of Applied Physics;2016-08-28
4. Comparative Study of Strain-Engineered InAs Quantum Dots via an In0.23Ga0.77As Matrix with Various Sequences and Thicknesses;CHINESE J PHYS;2013
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