An analysis of the growth of silver catalyzed InxGa1−xAs nanowires on Si (100) by metal organic chemical vapor deposition
Author:
Affiliation:
1. Materials Science Centre, Indian Institute of Technology, Kharagpur 721302, India
2. Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Kolkata 700098, India
Funder
Department of Science and Technology, Ministry of Science and Technology (DST)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4961733
Reference56 articles.
1. Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs
2. Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxy
3. Influence of Nanowire Density on the Shape and Optical Properties of Ternary InGaAs Nanowires
4. Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy
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1. III-V nanowire-based ultraviolet to terahertz photodetectors: Device strategies, recent developments, and future possibilities;TrAC Trends in Analytical Chemistry;2020-09
2. Diameter‐Dependent Growth Direction of In x Ga 1− x As Nanowires: Transition from Nanowire Growth to Substrate Etching with Silver Catalyst Size;physica status solidi (b);2019-04-26
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