Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy

Published:2013-11 Issue: Volume:383 Page:158-165
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wu Jun,Borg B. Mattias,Jacobsson Daniel,Dick Kimberly A.,Wernersson Lars-Erik

Funder

Swedish Research Council (VR)

Swedish Foundation for Strategic Research (SSF)

Craford Foundation

The Knut and Alice Wallenberg Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. III-V Nanowires—Extending a Narrowing Road

2. RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates

3. Fermi Level Position at Semiconductor Surfaces

4. High Electron Mobility InAs Nanowire Field-Effect Transistors

5. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

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1. Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms;ACS Applied Nano Materials;2024-07-29

2. Interfacial profiles in vapor-liquid-solid grown III-V axial nanowire heterostructures based on group V interchange;Physical Review Materials;2024-07-19

3. Long indium-rich InGaAs nanowires by SAG-HVPE;Nanotechnology;2024-02-19

4. Composition of Vapor–Liquid–Solid III–V Ternary Nanowires Based on Group-III Intermix;Nanomaterials;2023-09-11

5. Liquid-solid and vapor-solid distributions of vapor-liquid-solid III-V ternary nanowires;Physical Review Materials;2023-09-11

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