High photoexcited carrier multiplication by charged InAs dots in AlAs∕GaAs∕AlAs resonant tunneling diode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2832368
Reference11 articles.
1. Quantum key distribution over 122 km of standard telecom fiber
2. Efficient Single Photon Detection by Quantum Dot Resonant Tunneling Diodes
3. A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots
4. Bistability of Resonant Tunnel Diode Structure with InAs Quantum Dots
5. Effect of InAs dots on noise of quantum dot resonant tunneling single-photon detectors
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