Bistability of Resonant Tunnel Diode Structure with InAs Quantum Dots
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Observation of intrinsic bistability in resonant tunneling structures
2. Negative differential conductance observed in a lateral double constriction device
3. Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures
4. A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots
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1. The photocurrent of resonant tunneling diode controlled by the charging effects of quantum dots;Optical and Quantum Electronics;2013-03-21
2. The photocurrent modulation of quantum dot resonant tunneling diode with forward bias voltage;International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies;2011-06-09
3. Aharonov-Bohm-Casher ring dot as a flux-tunable resonant tunneling diode;Physical Review B;2008-05-20
4. High photoexcited carrier multiplication by charged InAs dots in AlAs∕GaAs∕AlAs resonant tunneling diode;Applied Physics Letters;2008-01-14
5. Magnetic-field-induced recovery of resonant tunneling into a disordered quantum well subband;Physical Review B;2003-10-20
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