Patterned silicon molecular beam epitaxy with submicron lateral resolution
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93666
Reference9 articles.
1. Growth of three‐dimensional dielectric waveguides for integrated optics by molecular‐beam‐epitaxy method
2. Selective area growth of GaAs/AlxGa1−xAs multilayer structures with molecular beam epitaxy using Si shadow masks
3. Molecular beam epitaxial writing of patterned GaAs epilayer structures
4. GaAs planar technology by molecular beam epitaxy (MBE)
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3. Si(100) WAFERS CLEANED BY LASER ABLATION;International Journal of Modern Physics B;2004-10-10
4. Lowering of Silicon Surface Cleaning Temperature by Irradiating Low Energy Electron Beams;Japanese Journal of Applied Physics;1999-07-15
5. Growth Techniques and Procedures;Semiconductors and Semimetals;1998
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